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Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang

Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT…