Fracture and Structural Integrity e-ISSN 1971-8993 Open access
Fatigue Vol. 15, No. 55 (2021)

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Author and affiliation details
  • Dianhao Zhang College of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, China.
  • Xiao-guang Huang Corresponding author huangxg@upc.edu.cn
  • Bin-liang Cheng College of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, China
  • Neng Zhang College of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, China.
DOI
10.3221/IGF-ESIS.55.24
Pages
316-326
Published
Licence
CC BY 4.0
Published inVol. 15, No. 55 (2021)Go to the issue

Abstract

Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

Keywords

Article history

  1. ReceivedUntil the next stage: 35 days
  2. Revision requestedUntil the next stage: 25 days
  3. RevisedUntil the next stage: 0 days
  4. AcceptedUntil the next stage: 6 days
  5. Published

How to cite

APA

Zhang, D., Huang, X.-G., Cheng, B.-L., & Zhang, N. (2020). Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module. Fracture and Structural Integrity, 15(55), 316–326. https://doi.org/10.3221/IGF-ESIS.55.24

IEEE

D. Zhang, X.-G. Huang, B.-L. Cheng, and N. Zhang, “Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module,” Fracture and Structural Integrity, vol. 15, no. 55, pp. 316–326, 2020, doi: 10.3221/IGF-ESIS.55.24.

MLA

Zhang, Dianhao, et al. “Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module.” Fracture and Structural Integrity, vol. 15, no. 55, 2020, pp. 316–326. https://doi.org/10.3221/IGF-ESIS.55.24.

Chicago

Zhang, Dianhao, Xiao-guang Huang, Bin-liang Cheng, and Neng Zhang. 2020. “Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module.” Fracture and Structural Integrity 15 (55): 316–326. https://doi.org/10.3221/IGF-ESIS.55.24.

Harvard

Zhang, D., Huang, X.G., Cheng, B.L. and Zhang, N. (2020) ‘Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module’, Fracture and Structural Integrity, 15(55), pp. 316–326. doi: 10.3221/IGF-ESIS.55.24.

Vancouver

Zhang D, Huang XG, Cheng BL, Zhang N. Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module. Fracture and Structural Integrity. 2020;15(55):316-326. doi:10.3221/IGF-ESIS.55.24

BibTeX

@article{zhang2020, author = {Zhang, Dianhao and Huang, Xiao-guang and Cheng, Bin-liang and Zhang, Neng}, title = {Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module}, journal = {Fracture and Structural Integrity}, year = {2020}, volume = {15}, number = {55}, pages = {316--326}, doi = {10.3221/IGF-ESIS.55.24}, url = {https://doi.org/10.3221/IGF-ESIS.55.24}, issn = {1971-8993} }

RIS

TY - JOUR AU - Zhang, Dianhao AU - Huang, Xiao-guang AU - Cheng, Bin-liang AU - Zhang, Neng TI - Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module JO - Fracture and Structural Integrity T2 - Fracture and Structural Integrity PY - 2020 DA - 2020/12/28 VL - 15 IS - 55 SP - 316 EP - 326 DO - 10.3221/IGF-ESIS.55.24 UR - https://doi.org/10.3221/IGF-ESIS.55.24 SN - 1971-8993 ER -

Licence

Creative Commons Attribution 4.0 International

May be shared and adapted, provided appropriate credit is given. Copyright © 2020 Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang.

Copyright 
Authors are allowed to retain both the copyright and the publishing rights of their articles without restrictions.  

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